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  production specification pnp medium power transistors bcx51/bcx52/bcx53 e020 www.gmicroelec.com rev.a 1 features z for af driver and output stages. z high collector current. z low collector-emitter saturation voltage. z complementary types: bcx54/bcx55/bcx56. applications z medium power general purposes. z driver stages of audio amplifiers. sot-89 ordering information type no. marking package code bcx51 aa sot-89 BCX51-10 ac sot-89 bcx51-16 ad sot-89 bcx52 ae sot-89 bcx52-10 ag sot-89 bcx52-16 am sot-89 bcx53 ah sot-89 bcx53-10 ak sot-89 bcx53-16 al sot-89 maximum rating @ ta=25 unless otherwise specified symbol parameter value unit v cbo collector-base voltage bcx51 bcx52 bcx53 -45 -60 -100 v v ceo collector-emitter voltage bcx51 bcx52 bcx53 -45 -60 -80 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a i cm collector current -peak -1.5 a p d total device dissipation 500 mw t j, t stg junction and storage temperature -65 to +150 electrical characteristics @ ta=25 unless otherwise specified pb lead-free
production specification pnp medium power transistors bcx51/bcx52/bcx53 e020 www.gmicroelec.com rev.a 2 parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a i e =0 bcx51 bcx52 bcx53 -45 -60 -100 v collector-emitter breakdown voltage v (br)ceo i c =-10ma i b =0 bcx51 bcx52 bcx53 -45 -60 -80 v emitter-base breakdown voltage v (br)ebo i e =-10 a i c =0 -5 v collector cut-off current i cbo v cb =-30v i e =0 -0.1 a dc current gain h fe v ce =-2v i c =-5ma 25 v ce =-2v i c =-150ma bcx51?53 40 250 v ce =-2v i c =-150ma -10 -16 63 100 160 250 v ce =-2v i c =-500ma 25 collector-emitter saturation voltage v ce(sat) i c =-500ma i b =-50ma -0.5 v base-emitter voltage v be i c =-500ma ,v ce =-2v -1 v transition frequency f t v ce =-10 i c =-50ma, f=20mh 125 mhz
production specification pnp medium power transistors bcx51/bcx52/bcx53 e020 www.gmicroelec.com rev.a 3 typical characteristics @ ta=25 unless otherwise specified
production specification pnp medium power transistors bcx51/bcx52/bcx53 e020 www.gmicroelec.com rev.a 4
production specification pnp medium power transistors bcx51/bcx52/bcx53 e020 www.gmicroelec.com rev.a 5 package outline plastic surface mounted package sot-89 soldering footprint unit:mm package information sot-89 dim min max a 4.30 4.70 b 2.25 2.65 c 1.50 typical d 0.40 typical e 1.40 1.60 f 0.48 typical h 1.60 1.80 j 0.40 typical l 0.90 1.10 k 3.95 4.35 all dimensions in mm device package shipping bcx51/bcx52/bcx53 sot-89 1000/tape&reel b k c d e j f a h l 4 5 4 5 1.00 1.50 1.50 0.90 2.20 0.90 1.00 1.50


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